Open AccessSimulation and optimal design of antimony selenide thin film solar cells
Author(s) -
Yu Cao,
Xiaoli Zhu,
Hanbo Chen,
Changgang Wang,
Xintong Zhang,
Hou Bing-Dong,
Shen Ming-Ren,
Jing Zhou
Publication year - 2018
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.67.20181745
Subject(s) - energy conversion efficiency , antimony , solar cell , selenide , materials science , analytical chemistry (journal) , chemistry , optoelectronics , selenium , metallurgy , chromatography
In this paper, the wx-AMPS simulation software is used to model and simulate the antimony selenide (Sb 2 Se 3 ) thin film solar cells. Three different electron transport layer models (CdS, ZnO and SnO 2 ) are applied to the Sb 2 Se 3 solar cells, and the conversion efficiencies of which are obtained to be 7.35%, 7.48% and 6.62% respectively. It can be seen that the application of CdS and ZnO can achieve a better device performance. Then, the electric affinity of the electron transport layer ( χ e-ETL ) is adjusted from 3.8 eV to 4.8 eV to study the effect of the energy band structure change on the solar cell performance. The results show that the conversion efficiency of the Sb 2 Se 3 solar cell first increases and then decreases with the increase of the χ e-ETL . The lower χ e-ETL creates a barrier at the interface between the electron transport layer and the Sb 2 Se 3 layer, which can be considered as a high resistance layer, resulting in the increase of series resistance. On the other hand, when the χ e-ETL is higher than 4.6 eV, the electric field of the electron transport layer can be reversed, leading to the accumulation of the photon-generated carriers at the interface between the transparent conductive film and the electron transport layer, which could also hinder the carrier transport and increase the series resistance. At the same time, the electric field of Sb 2 Se 3 layer becomes weak with the value of χ e-ETL increasing according to the band structure of the Sb 2 Se 3 solar cell, leading to the increase of the carriers' recombination and the reduction of the cell parallel resistance. As a result, too high or too low χ e-ETL can lower the FF value and cause the device performance to degrade. Thus, to maintain high device performance, from 4.0 eV to 4.4 eV is a suitable range for the χ e-ETL of the Sb 2 Se 3 solar cell. Moreover, based on the optimization of the χ e-ETL , the enhancement of the Sb 2 Se 3 layer material quality can further improve the solar cell performance. In the case of removing the defect states of the Sb 2 Se 3 layer, the conversion efficiency of the Sb 2 Se 3 solar cell with a thickness of 0.6 μm is significantly increased from 7.87% to 12.15%. Further increasing the thickness of the solar cell to 3 μm, the conversion efficiency can be as high as 16.55% ( J sc =34.88 mA/cm 2 , V oc =0.59 V, FF =80.40%). The simulation results show that the Sb 2 Se 3 thin film solar cells can obtain excellent performance with simple device structure and have many potential applications.