Open AccessSimulink modeling of memristor, memcapacitor, meminductor and their characteristics analysis
Author(s) -
Xiaoyuan Wang,
Jianglong Yu,
Guangyi Wang
Publication year - 2018
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.67.20172674
Subject(s) - memristor , computer science , nonlinear system , state (computer science) , series (stratigraphy) , electronic engineering , algorithm , physics , engineering , quantum mechanics , paleontology , biology
Memristor, memcapacitor and meminductor are novel nonlinear circuit elements with memory, which are also known as the memory elements. Based on the mathematical models of these three circuit elements, from the point of view of mathematical analysis, memristor, memcapacitor and meminductor Simulink based models are established. Simulink models of the memory elements reflect that their values are dependent on their historical states and their state variables, and correctly show their unique memory properties. A series of simulation analyses are done, and the typical characteristics of the three memory elements are obtained, showing the validities of these models. In addition, by studying the circuit characteristics under different parameters and excitations, the changing laws of these equivalent models with frequency and amplitude are obtained, which lay the foundation for research and application based on memristor, memcapacitor and meminductor's Simulink simulator.