High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications

The relatively low breakdown voltage (BV) seriously restricts the high power application of GaN based high electron mobility transistors (HEMTs). In this work, a novel AlGaN/GaN HEMT with buried p-n junctions is investigated to improve the breakdown characteristics by introducing six equidistant p-GaN islands buried buffer layer (PIBL) into the n-GaN epitaxial layer. The p-GaN islands act as reversed p-n junctions, which produces new electric field peaks at the edges of p-GaN islands, then realizing a much high breakdown voltage, and the reversed p-n junctions can help to suppress punch-through effect in buffer layer. Furthermore, the characteristics of proposed device are analyzed in detail from the aspects of off-state I-V characteristics, equipotential contour distribution, off-state electric field distribution, offstate carrier distribution and output characteristics. Simulated equipotential contour distribution shows that under the condition of high-voltage blocking state, multiple reverse p-n junctions introduced by the buried p-GaN islands produce five new electric field peaks, realizing a more uniform equipotential contour distribution especially at the edges of the buried p-islands. Then off-state electric field distribution demonstrates that p-GaN islands modulate the surface and bulk electric fields, which makes the voltage distributed in a larger area, therefore presenting a much higher breakdown voltage. It can be seen from off-state carrier distribution that the electrons in the buffer layer fully depleted in PIBL HEMT effectively suppress the buffer leakage current, thus alleviating the buffer-leakage-induced impact ionization leading to a high breakdown BV of over 1700 V with gate-to-drain length of 10μm, which is nearly 3 times larger than BV of 580 V in conventional AlGaN/GaN HEMT. Although, the introduction of p-type buried layer narrows the current path and causes an improved on-resistance, simulation shows that the specific on-resistance (Ron,sp) of PIBL HEMT is only about 1.47 mΩ·cm2, while the BV of the PIBL device is over 1700 V, and the obtained figure of merit (FOM=BV2/Ron,sp) reaches as high as 1966 MW·cm-2. The optimization of device structure reveals that when the distance between p-GaN layer and AlGaN layer (t) is 0.2μm, a thinner buried p-GaN island (tp) should help to realize a more significant electric field modulation, and PIBL HEMT can achieve a maximum BV of 1789 V with a tp=0.1μm. Compared with the traditional AlGaN/GaN HEMT, the PIBL HEMT reveals a higher breakdown voltage, meanwhile ensuring low Ron,sp, which makes this structure a promising candidate in the applications of high power electronic devices.