
High performance graphene Hall sensors
Author(s) -
Le Huang,
Zhiyong Zhang,
Peng Lian-Mao
Publication year - 2017
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.66.218501
Subject(s) - graphene , hall effect sensor , materials science , passivation , hall effect , fabrication , nanotechnology , graphene nanoribbons , optoelectronics , silicon , integrated circuit , quantum hall effect , electronic circuit , magnetic field , layer (electronics) , magnet , electrical engineering , physics , medicine , alternative medicine , quantum mechanics , pathology , engineering
The state-of-the-art graphene Hall elements and integrated circuits are reviewed. By optimizing the growth and transfer of graphene and the micro-fabrication process of Hall sensor, graphene Hall elements and integrated circuits outperform conventional Hall sensors in many aspects. Graphene Hall elements exhibit better sensitivities, resolutions, linearities and temperature stabilities than commercialized Hall elements. Through developing a set of passivation processes, the stabilities of graphene Hall elements are improved. Besides, the flexible magnetic sensing and multifunctional detection applications based on graphene are demonstrated. In addition, graphene/silicon hybrid Hall integrated circuits are realized. By developing a set of low temperature processes (below 180℃), graphene Hall elements are monolithically integrated onto the passivation layer of silicon complementary metal oxide semiconductor chip. This work demonstrates that graphene possesses significant performance advantages in Hall magnetic sensing and potentially practical applications.