Two-dimensional hexagonal boron nitride based memristor | Zendy

Quantan Wu | Zendy; Tuo Shi | Zendy; Zhao Xiaolong | Zendy; Xumeng Zhang | Zendy; Facai Wu | Zendy; Rongrong Cao | Zendy; Long Shibing | Zendy; L uuml Hang-Bing | Zendy; Qi Liu | Zendy; Ming Liu | Zendy

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Two-dimensional hexagonal boron nitride based memristor

Author(s) -

Quantan Wu,

Tuo Shi,

Zhao Xiaolong,

Xumeng Zhang,

Facai Wu,

Rongrong Cao,

Long Shibing,

L uuml Hang-Bing,

Qi Liu,

Ming Liu

Publication year - 2017

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.66.217304

Subject(s) - materials science , neuromorphic engineering , hexagonal boron nitride , memristor , optoelectronics , resistive touchscreen , nitride , resistive random access memory , voltage , boron nitride , hexagonal crystal system , nanotechnology , electrical engineering , layer (electronics) , computer science , chemistry , graphene , engineering , machine learning , artificial neural network , crystallography

Hexagonal boron nitride (h-BN) based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The device shows the coexistence of forming-free and self-compliance bipolar resistive switching behavior with reproducible switching endurance and long retention time. Moreover, the device in pulse mode shows analog resistive switching characteristics, i.e. the resistance states can be continuously tuned by successive voltage pulses. This suggests that the device is also capable of mimicking the synaptic weight changes in neuromorphic systems.

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