Open AccessTwo-dimensional hexagonal boron nitride based memristor
Author(s) -
Quantan Wu,
Tao Shi,
Xiaolong Zhao,
Zhang Xu-Meng,
Facai Wu,
Rongrong Cao,
Shibing Long,
Luuml; Hang-Bing,
Qi Liu,
Ming Liu
Publication year - 2017
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.66.217304
Subject(s) - materials science , neuromorphic engineering , hexagonal boron nitride , memristor , optoelectronics , resistive touchscreen , nitride , resistive random access memory , voltage , boron nitride , hexagonal crystal system , nanotechnology , electrical engineering , layer (electronics) , computer science , chemistry , graphene , engineering , machine learning , artificial neural network , crystallography
Hexagonal boron nitride (h-BN) based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The device shows the coexistence of forming-free and self-compliance bipolar resistive switching behavior with reproducible switching endurance and long retention time. Moreover, the device in pulse mode shows analog resistive switching characteristics, i.e. the resistance states can be continuously tuned by successive voltage pulses. This suggests that the device is also capable of mimicking the synaptic weight changes in neuromorphic systems.