Open AccessMolecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films
Author(s) -
祝梦遥,
鲁军,
马佳淋,
李利霞,
王海龙,
潘东,
赵建华
Publication year - 2015
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.64.077501
Subject(s) - molecular beam epitaxy , materials science , annealing (glass) , hall effect , magnetic semiconductor , electron diffraction , thin film , curie temperature , semiconductor , cadmium telluride photovoltaics , epitaxy , analytical chemistry (journal) , condensed matter physics , optoelectronics , diffraction , nanotechnology , optics , magnetic field , ferromagnetism , chemistry , layer (electronics) , metallurgy , physics , quantum mechanics , chromatography
Diluted magnetic semiconductor (Ga, Mn)Sb and its related hetero-structures have attracted much attention in recent years since they are predicted to have some novel properties, such as the quantum anomalous Hall effect etc. However, it is not easy to grow high-quality (Ga, Mn)Sb films due to their narrow growth window. In this article, a series of 10 nm thick (Ga, Mn)Sb films with different Mn contents from 0.016 to 0.039 have been grown by molecular-beam epitaxy at low temperaturs (230 ℃). The films have high crystalline quality as confirmed by in situ reflection high-energy electron diffraction and ex situ atomic force microscopy, and no MnSb phase could be observed. Curie temperature up to 30 K has been obtained in one (Ga, Mn)Sb film after post-growth thermal annealing. The magneto-resistance and anomalous Hall effect of this film have also been investigated at different temperatures.