Open AccessResearch on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise
Author(s) -
Danghui Wang,
Xu Tian-Han,
Rong Wang,
Luo She-Ji,
T. Yao
Publication year - 2015
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.64.050701
Subject(s) - light emitting diode , optoelectronics , diode , materials science , current (fluid) , noise (video) , spontaneous emission , infrasound , physics , optics , laser , computer science , artificial intelligence , image (mathematics) , thermodynamics , acoustics
In this paper, we measure the emission transition mechanisms in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LED) using low-frequency current noise from 0.1 to 10 mA. According to the characteristics of the low-frequency current noise and the emission mechanisms of InGaN/GaN LEDs, we study the relationships between low-frequency current noise and current flows through the LEDs. Conclusions indicate that the low-frequency current noise is increased with the increasing current from 0.1 to 10 mA. With a lower current (I10 mA) it is the 1/f noise that dominates in LEDs, so there exists an emission transition mechanism in InGaN/GaN MQW LEDs between 0.1 and 10 mA, showing that the mechanism of the carrier recombination changes from non-radiative recombination to a stable fluctuation of carrier numbers. Conclusions of this paper provide an effective method to characterize the emission transition mechanisms, optimize the design of LED so as to improve the quantum efficiency for InGaN/GaN MQW LEDs.