Open AccessOrganic memristive devices based on DNA embedded in silver nanoparticles layer
Author(s) -
Wei Yuan,
Ruibing Dong,
Xi Yan
Publication year - 2015
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.64.048402
Subject(s) - materials science , indium tin oxide , nanoparticle , optoelectronics , layer (electronics) , electric field , bromide , silver nanoparticle , silver bromide , polarity (international relations) , voltage , nanotechnology , particle (ecology) , bistability , indium , oxide , conductivity , inorganic chemistry , electrical engineering , chemistry , cell , oceanography , engineering , genetics , biology , quantum mechanics , metallurgy , physics , geology , silver halide
Two-terminal electrical bistable device is fabricated with structure “Al/deoxyribonucleic acid-cetyltrimethylam- monium bromide/silver nanoparticles/deoxyribonucleic acid-cetyltrimethylammonium bromide/indium tin oxide”, and I-V curves are measured. The results show that the conductivity and the memristive characteristics are significantly improved by the embedding Ag nanoparticles layer. The optimal particle diameters are in a range of 15 - 20 nm, and the maximum on/off current ratio can reach 103. It is also found that I-V characteristic of the device depends on the sweeping voltage amplitude VA. As VA increases, switching voltages (VSET, VRESET) and the on/off current ratio ION/IOFF increase. Furthermore, the transition between high-and low-resistance-state depends on the direction of the applied electric field, which shows that the device possesses polarity.