Open AccessAnalysis of ionizing and department damage mechanism in proton-irradiation-induced scientific charge-coupled device
Author(s) -
Liping Wen,
Yudong Li,
Qi Guo,
Dazhong Ren,
Bo Wang,
; María
Publication year - 2015
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.64.024220
Subject(s) - irradiation , proton , charge (physics) , charge coupled device , ionizing radiation , mechanism (biology) , annealing (glass) , signal (programming language) , materials science , optoelectronics , physics , nuclear engineering , optics , computer science , nuclear physics , quantum mechanics , composite material , programming language , engineering
A sort of homemade buried scientific charge-coupled device (CCD) is injected by 10 MeV protons, and measurements are carried out primarily on change of dark signal, charge transfer efficiency. Results show that parameters of CCD presented significantly decrease. Post-irradiation annealing is implemented and the results revel that CCD parameters recover to different extents. In this paper, analysed are the mechanism for the decrease of CCD parameters, and their dependences on process and structure in manufacture. The results above will provide helpful reference in characterization evaluation and technique development of future CCD.