Open AccessResearches on the electrical properties of vanadium oxide thin films on Si substrates
Author(s) -
Ying Xiong,
Wen Qi-Ye,
T. C. Wei,
Qi Mao,
Zhi Chen,
Yang Qu,
Jing Yu-Lan
Publication year - 2015
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.64.017102
Subject(s) - materials science , thin film , vanadium oxide , substrate (aquarium) , optoelectronics , sputtering , voltage , threshold voltage , oxide , silicon , electrical resistivity and conductivity , phase transition , condensed matter physics , nanotechnology , electrical engineering , transistor , oceanography , engineering , geology , metallurgy , physics
Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation (011), the VO2 films have an excellent thermal-induced metal-insulator transition (MIT). The electrically-driven MIT (E-MIT) characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.