Open AccessThree-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
Author(s) -
Jinxin Zhang,
He Chaohui,
Hao Guo,
Tao Du,
Chao Xiong,
Pei Li,
Xin Wang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.248503
Subject(s) - heterojunction bipolar transistor , heterojunction , transient (computer programming) , bipolar junction transistor , materials science , transistor , terminal (telecommunication) , optoelectronics , heterostructure emitter bipolar transistor , biasing , event (particle physics) , computer science , voltage , physics , telecommunications , quantum mechanics , operating system
In this paper we establish a three-dimensional (3D) numerical simulation model of domestic SiGe heterojunction bipolar transistor (SiGe HBT) by using technology computer aided design tools, to study the bias effect on single event effect (SEE) of SiGe HBT. The response relationship between SEE and the bias of SiGe HBT is identified based on the analyses of transient current peak and charge collection of each terminal. The results show that the worst biases for SEE are different for different terminals. Even for the same terminal, the worst biases for charge collection and transient current peak are different. This phenomenon is caused mainly by the influence of applied electric field and the change of carrier transport mode.