Open AccessHole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor
Author(s) -
刘伟峰,
宋建军
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.238501
Subject(s) - pmos logic , materials science , effective mass (spring–mass system) , conductivity , electron mobility , optoelectronics , semiconductor , compressive strength , quantization (signal processing) , composite material , electrical engineering , voltage , transistor , computer science , physics , quantum mechanics , computer vision , engineering
Within the framework of k p perturbation theory, models of the hole quantization and conductivity effective mass for the inversion layer in uniaxially tensile/compressive and Si-based baixially strained p-channel metal-oxid-semiconductor (PMOS) have been established. Results show that: 1) uniaxially compressive technique should be chosen for the carrier mobility enhancement in uniaxially strained PMOS; 2) the magnitude of uniaxial stress will be less than that of the biaxial case to improve PMOS performance using strained technique; 3) strained Si1-xGex is preferred to use instead of using strained Si, when we choose the biaxially strained materials for the PMOS channel. Our results can provide valuable references to Si-based and other strained device and materials design.