Open AccessModeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor
Author(s) -
Bai Yu-Rong,
Jing-Ping Xu,
Lu Liu,
Fan Min-Min,
Yong Huang,
Cheng Zhi-Xiang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.237304
Subject(s) - materials science , transconductance , channel length modulation , drain induced barrier lowering , field effect transistor , dielectric , optoelectronics , transistor , threshold voltage , saturation velocity , gate dielectric , germanium , gate oxide , saturation (graph theory) , semiconductor , oxide , voltage , electrical engineering , silicon , metallurgy , engineering , mathematics , combinatorics
An analytical model for drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator (GeOI) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is established by solving two-dimensional Poisson's equation to derive the surface potential and inversion charge in the channel region. This drain current model includes velocity-saturation, channel-length modulation and mobility-modulation effects; and it simultaneously considers the impacts of the interface-trapped charges at both gate oxide/channel and buried oxide/channel interfaces and the fixed oxide charges on the drain current. A good agreement between the simulated drain current and experimental data is achieved in both the saturation and non-saturation regions, confirming the validity of the model. Using the model, the influences of the main structural and physical parameters on transconductance, output conductance, cut-off frequency, and voltage gain of the device are investigated. These can be served as a guide for the design of the GeOI PMOSFET.