Open AccessStudy on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage
Author(s) -
刘翔宇,
胡辉勇,
张鹤鸣,
宣荣喜,
宋建军,
舒斌,
Bin Wang,
王萌
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.237302
Subject(s) - materials science , threshold voltage , optoelectronics , field effect transistor , polycrystalline silicon , gate oxide , transistor , germanium , oxide , silicon , voltage , metal gate , stress (linguistics) , electric field , electrical engineering , thin film transistor , nanotechnology , physics , layer (electronics) , metallurgy , linguistics , philosophy , quantum mechanics , engineering
In this work, the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) with poly-Si1-xGex gate has been studied. Based on the analysis of vertical electric field and potential distribution, the equipment oxide thickness of strained SiGe PMOSFET with poly Si1-xGex gate is established. The mechanism and the influence of hot carriers induced are studied. A model of the drift of threshold voltage is established; its relationships with the duration of the applied electrical stress, the voltage of gate, the Ge content of the poly Si1-xGex gate and the strained SiGe are also obtained. Based on the above results, the simulation results have been compared with the experimental data. The drift of threshold voltage is 0.032 V under 10000 s electrical stress. A good agreement is observed, which indicates the validation of our proposed model.