Open AccessNew REBULF super junction LDMOS with the N type buffered layer
Author(s) -
段宝兴,
曹震,
袁小宁,
杨银堂
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.227302
Subject(s) - ldmos , electric field , breakdown voltage , materials science , substrate (aquarium) , voltage , optoelectronics , layer (electronics) , mosfet , power mosfet , electrical engineering , transistor , nanotechnology , physics , engineering , oceanography , quantum mechanics , geology
In this paper, a new REBULF (reduced BULk field) SJ-LDMOS (lateral double-diffused MOSFET) is proposed with the N type buffered layer based on the buffered SJ-LDMOS for the low loss of LDMOS used in the power integrated circuits. In this structure, the problem of the substrate-assisted depletion, produced due to the P-type substrate for the N-channel SJ-LDMOS, is eliminated by the N-type buffered layer. The charges for the N-type and P-type pillars are depleted completely. Moreover, a new electric field peak is introduced into the surface electric field distribution, which makes the lateral surface electric field uniform. The breakdown voltage is improved for the REBULF SJ-LDMOS in virtue of the ISE simulation results. By optimizing the location and parameters of the N-type buried layer, the breakdown voltage of REBULF SJ-LDMOS is increased by about 49% compared with that of the conventional LDMOS, and improved by about 30% compared with that of the buffered SJ-LDMOS.