New REBULF super junction LDMOS with the N type buffered layer | Zendy

Baoxing Duan | Zendy; Zhen Cao | Zendy; Xiaoning Yuan | Zendy; Yang Yintang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

New REBULF super junction LDMOS with the N type buffered layer

Author(s) -

Baoxing Duan,

Zhen Cao,

Xiaoning Yuan,

Yang Yintang

Publication year - 2014

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.63.227302

Subject(s) - ldmos , electric field , breakdown voltage , materials science , substrate (aquarium) , voltage , optoelectronics , layer (electronics) , mosfet , power mosfet , electrical engineering , transistor , nanotechnology , physics , engineering , oceanography , quantum mechanics , geology

In this paper, a new REBULF (reduced BULk field) SJ-LDMOS (lateral double-diffused MOSFET) is proposed with the N type buffered layer based on the buffered SJ-LDMOS for the low loss of LDMOS used in the power integrated circuits. In this structure, the problem of the substrate-assisted depletion, produced due to the P-type substrate for the N-channel SJ-LDMOS, is eliminated by the N-type buffered layer. The charges for the N-type and P-type pillars are depleted completely. Moreover, a new electric field peak is introduced into the surface electric field distribution, which makes the lateral surface electric field uniform. The breakdown voltage is improved for the REBULF SJ-LDMOS in virtue of the ISE simulation results. By optimizing the location and parameters of the N-type buried layer, the breakdown voltage of REBULF SJ-LDMOS is increased by about 49% compared with that of the conventional LDMOS, and improved by about 30% compared with that of the buffered SJ-LDMOS.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research