Open AccessComputer simulation of electric properties of metal-ferroelectric-substrate structured ferroelectric field effect transistor under ionizing radiation
Author(s) -
吴传禄,
马颖,
蒋丽梅,
周益春,
李建成
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.216102
Subject(s) - ferroelectricity , materials science , transistor , optoelectronics , capacitance , field effect transistor , polarization (electrochemistry) , radiation , substrate (aquarium) , electric field , ionizing radiation , irradiation , electrical engineering , voltage , optics , electrode , dielectric , physics , chemistry , oceanography , quantum mechanics , nuclear physics , engineering , geology
This article uses the Miller model to simulate the ferroelectric polarization of the metal-ferroelectrics-insulator-substrate (MFIS) structured ferroelectric field effect transistor (FeFET), interfacial charge concentration, and charge migration rate under ionizing radiation. The capacitance and source-drain current at different total dose and different dose rate are calculated. Results show that the total dose of 0.1 MGy changes slightly the source leakage current and capacitance of the FeFET, and the total dose of 1 MGy leads to a larger variation in these quantities. When the radiation dose rate is varied, the minimal changes in the drain-source current and capacitance are observed. These results suggest that FeFET has a relatively large radiation hardness.