Open AccessDesign and analysis of high speed and high saturation uni-traveling-carrier photodetector
Author(s) -
Zhen Ge,
Huang Yong-qing,
Yuan Luo,
Duan Xiaofeng,
Xiaomin Ren
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.208502
Subject(s) - photodetector , saturation (graph theory) , optics , optoelectronics , computer science , materials science , physics , mathematics , combinatorics
In this paper, an InP-based mesa-structure uni-traveling-carrier photodetector is designed. By adopting Gaussian doping scheme in the absorption layer and incorporating an appropriate cliff layer, high speed and high saturation current characteristics are both achieved simultaneously. For the device with a 14 μm2 active area, the simulated results indicate that the bandwidth reaches 58 GHz and DC saturation current increases up to 158 mA at a reverse bias of 2 V. Under high optical injection, the bandwidth degradation and current saturation are studied, which are caused by energy band shift and electric field collapse.