Open AccessInfluence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET
Author(s) -
Shuai Yang,
Xiaoyan Tang,
Yuming Zhang,
Qi Song,
Yimen Zhang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.208501
Subject(s) - doping , materials science , breakdown voltage , voltage , pillar , ion , optoelectronics , mosfet , ion implantation , charge (physics) , electrical engineering , physics , transistor , engineering , structural engineering , quantum mechanics
SiC semi-superjunction vertical double diffused MOS (VDMOSFET) has higher breakdown voltage than conventional SiC VDMOSFET with the same on-resistance. The ion implantation to form p pillar region on N-type epilayer is a key process to form semi-superjunction stucture. The influences of charge imbalance induced by ion implantation on breakdown voltages of 4H-SiC superjunction and semi-superjunction VDMOSFET are investigated through two-dimensional numerical simulation, and the largest breakdown voltage is obtained when charge imbalance is 30%. With the same structure parameters of devices, when breakdown voltage decreases by 15% due to the deviation of doping concentration in P pillars, the tolerance of doping concentration for the semi-superjunction VDMOSFET is 69.5% higher than for superjunction VDMOSFET which means that less precise process control of ion implantation for semi-superjunction VDMOSFET, will be required with less difficulty in the manufacture of pillars.