Open AccessStudies on synthesis of boron-doped Gem-diamond single crystals under high temperature and high presure
Author(s) -
Hongyu Xiao,
Shangsheng Li,
Yukun Qin,
Zhongzhu Liang,
Yongsheng Zhang,
Dongmei Zhang,
Yishun Zhang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.198101
Subject(s) - diamond , boron , materials science , material properties of diamond , doping , crystal growth , alloy , phase diagram , temperature gradient , synthetic diamond , single crystal , crystal (programming language) , phase (matter) , metallurgy , crystallography , optoelectronics , chemistry , organic chemistry , physics , quantum mechanics , computer science , programming language
In this paper, by choosing catalyst of FeNiMnCo alloy, boron-doped diamond single crystals are synthesized under 5.1–5.6 GPa and 1230–1600℃; the temperature field is studied by finite element method (FEM). First, the P-T phase diagram for diamond single crystal growth, in the synthesis system of FeNiMnCo-C-B, is obtained, and the lowest synthesis conditions of 5.1 GPa and 1230℃ is found in the studies. By simulation with FEM, it is found that the content of boron element should be less and less in the growth of diamond single crystal in the {111} sector, and the reason is that the growth speed is reduced in the sectors. By growing diamond crystals with {111} faces, it is also found that the content of boron element in {111} secondary sector is greater than that in {111} primary sector, which is duo to the rapid growth of {111} secondary sector. Compared with the synthesis of diamond single crystal by film growth method, the diamond crystals thus obtained has no pits, the doping content of boron can be greater, and the diamond can be synthesized by temperature gradient method.