Open AccessA model of hot carrier gate current for uniaxially strained Si NMOSFET
Author(s) -
Lijun Yi,
Heming Zhang,
Huiyong Hu,
Yang Jin-Yong
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.197103
Subject(s) - materials science , time dependent gate oxide breakdown , mosfet , optoelectronics , gate oxide , hot carrier injection , reliability (semiconductor) , field effect transistor , gate dielectric , current (fluid) , stress (linguistics) , transistor , power (physics) , electrical engineering , voltage , engineering , linguistics , physics , philosophy , quantum mechanics
Hot carrier gate current is one of the factors that influence the power and reliability of metal-oxide-semiconductor field effect transistor (MOSFET). Based on the physical process of generation of the hot carrier effect, a model of hot carrier gate current for uniaxially strained Si NMOSFET is developed. With that model, the simulation results of hot carrier gate current against stress intensity, gate-source bias, channel doping concentration, and drain-source bias are obtained and analyzed. The relationship between life time of time-dependent dielectric break down (TDDB) and gate-source bias is simulated and analyzed. Results show that the uniaxially strained Si MOSFET not only has smaller hot carrier gate current, but also has more stable reliability as compared with the strainless bulk device. Meanwhile, the simulation results match the experimental results very well, which validates the accuracy of the model.