Open AccessProperties of memristor in RLC circuit and diode circuit
Author(s) -
Wang Tian-shu,
Zhang Rui-De,
Zhe Guan,
Ba Ke,
Yunxiao Zu
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.178101
Subject(s) - memristor , rlc circuit , inductance , electronic circuit , equivalent circuit , diode , capacitance , electrical element , computer science , equivalent series inductance , electronic engineering , electrical engineering , materials science , optoelectronics , capacitor , physics , voltage , engineering , electrode , quantum mechanics
The study focuses on studying the basic properties of memristors in RLC circuit and diode circuit. Mathematical models are built up separately for memristors in the two types of circuits. In order to understand the influence of the model's parameters on the circuits' properties, simulations are made for the two mathematical models. The model's parameters include properties such as the capacitance, resistance and inductance. In the final part of the paper, we give and make conclusions based on the simulation results.