Open AccessInfluences of the substrate position on the morphology and characterization of phosphorus doped ZnO nanomaterial
Author(s) -
Feng Qian,
Xu Rui-Zhuo,
Huajun Guo,
Kun Xu,
Rong Li,
Pengcheng Tao,
Liang Hongwei,
Jiayuan Liu,
Mei Yi-Ying
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.168101
Subject(s) - materials science , nanowire , photoluminescence , substrate (aquarium) , doping , nanomaterials , heterojunction , chemical vapor deposition , phosphorus , nanotechnology , nanostructure , field electron emission , semiconductor , chemical engineering , scanning electron microscope , optoelectronics , electron , composite material , oceanography , engineering , metallurgy , geology , physics , quantum mechanics
One-dimensional phosphorus doped ZnO nanowires and nanonails are prepared on Si substrate without employing any metal catalyst by chemical vapor deposition method. Field-emission scanning electron microscopy shows that the samples located downstream 1.5 cm away from the source material are of nanowire structure and located 1 cm above source materials of nanonail structure, and the growth mechanisms of phosphorus doped ZnO nanostructures with different morphologies are discussed. The photoluminescence properties of phosphorus doped ZnO nanowires and nanonails are studied at a temperature of 10 K. The phosphorus related acceptor emissions are observed. Furthermore, the current-voltage (I-V) measurement based on the ZnO nanostructures/Si heterojunctions shows a typical semiconductor rectification characteristic with positive open electric fields being 4.8 and 3.2 V, respectively.