Laser diode end-pumped continuous-wave Nd：YVO4 self-Raman laser at 1175 nm | Zendy

Fan Li | Zendy; Haitao Chen | Zendy; Zhu Jun | Zendy

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Laser diode end-pumped continuous-wave Nd：YVO4 self-Raman laser at 1175 nm

Author(s) -

Fan Li,

Haitao Chen,

Zhu Jun

Publication year - 2014

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.63.154208

Subject(s) - materials science , raman spectroscopy , laser , diode , energy conversion efficiency , continuous wave , raman laser , optics , optoelectronics , laser diode , doping , slope efficiency , crystal (programming language) , laser power scaling , laser pumping , raman scattering , wavelength , fiber laser , physics , computer science , programming language

In this paper, an LD (laser diode) end-pumped continuous-wave Nd:YVO4 self-Raman laser at 1175 nm is reported. The doping concentration and structure of the self-Raman crystals are optimized to reduce the thermal effects of the crystal, and a high-efficient diode-end-pumped continuous-wave self-Raman laser operated at 1175 nm is demonstrated. Finally, the thermal effects are efficiently improved by using a double-end diffusion-bonded composite Nd:YVO4 crystal as a gain medium. An output power up to 3.4 W of the first-order Stokes line 1175 nm is achieved at the incident diode pump power of 25.5 W, corresponding to a diode-to-Stokes optical conversion efficiency of 13.3% and a slope efficiency of 14.6%. The Raman threshold is as low as 2.21 W of diode power at 808 nm.

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