Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt resistive random access memory cell | Zendy

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Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt resistive random access memory cell

Author(s) -

Hua Pang,

Ning Deng

Publication year - 2014

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.63.147301

Subject(s) - materials science , protein filament , x ray photoelectron spectroscopy , resistive random access memory , resistive touchscreen , electrical conductor , oxygen , electrode , composite material , nuclear magnetic resonance , electrical engineering , chemistry , physics , organic chemistry , engineering

Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt cell are investigated. The cell has a forming-free property and shows an abnormal non-polar switching behavior. A high ON/OFF resistance ratio (>105) is obtained. The resistance of the on-state is independent of cell size, which implies that a conductive filament is formed in HfO2 film. X-ray photoelectron spectroscopy is used to investigate the compositions and valences of Ni and Hf in HfO2 film for the on-state cell. The results show that there is a hybrid filament comprised of a Ni filament and an oxygen vacancy filament in the HfO2 film for the on-state.

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