Open AccessElectric characteristics and resistive switching mechanism of Ni/HfO2/Pt resistive random access memory cell
Author(s) -
Hua Pang,
Ning Deng
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.147301
Subject(s) - materials science , protein filament , x ray photoelectron spectroscopy , resistive random access memory , resistive touchscreen , electrical conductor , oxygen , electrode , composite material , nuclear magnetic resonance , electrical engineering , chemistry , physics , organic chemistry , engineering
Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt cell are investigated. The cell has a forming-free property and shows an abnormal non-polar switching behavior. A high ON/OFF resistance ratio (>105) is obtained. The resistance of the on-state is independent of cell size, which implies that a conductive filament is formed in HfO2 film. X-ray photoelectron spectroscopy is used to investigate the compositions and valences of Ni and Hf in HfO2 film for the on-state cell. The results show that there is a hybrid filament comprised of a Ni filament and an oxygen vacancy filament in the HfO2 film for the on-state.