Open AccessStructure and optical absorption of nc-Si：H/α-SiC：H multilayers
Author(s) -
Ma Lei,
Jiang Bing,
Yi-Hao Chen,
Bo Shen,
Ying Peng
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.136804
Subject(s) - materials science , amorphous solid , nanocrystalline silicon , plasma enhanced chemical vapor deposition , nanocrystalline material , amorphous silicon , band gap , fourier transform infrared spectroscopy , analytical chemistry (journal) , attenuation coefficient , raman spectroscopy , annealing (glass) , silicon carbide , microstructure , silicon , optics , optoelectronics , crystalline silicon , composite material , crystallography , nanotechnology , chemistry , physics , chromatography
Nanocrystalline silicon nc-Si:H/SiC:H multilayers were fabricated by thermal annealing of the hydrogenated amorphous Si α-Si:H/hydrogenated amorphous silicon carbide α-SiC:H stacked structures prepared by plasma enhanced chemical vapor deposition (PECVD) system at 900–1000℃. The microstructures of annealed samples were investigated by Raman scattering, cross-section transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. Results demonstrate that the size of Si grains formed can be controlled by the α-Si:H layer thickness and annealing temperature. Optical absorption measurements show that the optical bandgap of the multilayered structures increases and the absorption coefficient decreases with diminishing Si grain size. However, the absorption coefficient and the optical bandgap of the multilayers are not influenced by the α-SiC:H layer thickness when the size of Si grains is kept constant.