Open AccessSelective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs nanowires by MOCVD
Author(s) -
崔建功,
张霞,
颜鑫,
李军帅,
黄永清,
任晓敏
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.136103
Subject(s) - nanowire , metalorganic vapour phase epitaxy , materials science , optoelectronics , photoluminescence , gallium arsenide , x ray absorption spectroscopy , nanotechnology , optics , epitaxy , absorption spectroscopy , physics , layer (electronics)
We have investigated the catalyst-free selective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs (0x3. GaAs nanowire length would become longer by reducing the mask opening size. Thus we can form the GaAs nanowire uniform arrays with appropriate length and width by controling growth conditions and mask opening size. Then the photoluminescence measurement of GaAs/InxGa1-xAs/GaAs (0x<1) core-shell nanowires is carried out.