Selective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs nanowires by MOCVD | Zendy

Jiangong Cui | Zendy; Xia Zhang | Zendy; Yan Xin | Zendy; Junshuai Li | Zendy; Huang Yong-qing | Zendy; Ren Xiao-Min | Zendy

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Selective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs nanowires by MOCVD

Author(s) -

Jiangong Cui,

Xia Zhang,

Yan Xin,

Junshuai Li,

Huang Yong-qing,

Ren Xiao-Min

Publication year - 2014

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.63.136103

Subject(s) - nanowire , metalorganic vapour phase epitaxy , materials science , optoelectronics , photoluminescence , gallium arsenide , x ray absorption spectroscopy , nanotechnology , optics , epitaxy , absorption spectroscopy , physics , layer (electronics)

We have investigated the catalyst-free selective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs (0x3. GaAs nanowire length would become longer by reducing the mask opening size. Thus we can form the GaAs nanowire uniform arrays with appropriate length and width by controling growth conditions and mask opening size. Then the photoluminescence measurement of GaAs/InxGa1-xAs/GaAs (0x<1) core-shell nanowires is carried out.

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