Open AccessPreparation of GaN nanowires by nonammonia method and their photoelectronic properties
Author(s) -
Junwei Zhao,
Yuefei Zhang,
Xuemei Song,
Hui Yan,
Ru-Zhi Wang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.117702
Subject(s) - wurtzite crystal structure , materials science , nanowire , photoluminescence , raman spectroscopy , chemical vapor deposition , plasma enhanced chemical vapor deposition , vapor–liquid–solid method , chemical engineering , nanotechnology , optoelectronics , zinc , optics , physics , engineering , metallurgy
Single-crystal hexagonal wurtzite GaN nanowires were successfully synthesized by using plasma-enhanced chemical vapor deposition (PECVD) via vapor-liquid-solid (V-L-S) mechanism, under the condition of non-ammonia at 1050 ℃. Raman spectra show that the as-synthesized nanowires have large disorder surface, in which there is a significantly small size effect. Furthermore, it is also observed that the prepared nanowires have typical photoluminescence characteristics and good field emission properties.