Open AccessModels on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET
Author(s) -
Fan Min-Min,
Jing-Ping Xu,
Lei Lu,
Bai Yu-Rong,
Yongjun Huang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.087301
Subject(s) - subthreshold conduction , threshold voltage , mosfet , materials science , optoelectronics , transistor , field effect transistor , gate oxide , subthreshold slope , dielectric , voltage , gate dielectric , electrical engineering , engineering
An analytical model on threshold voltage and subthreshold swing for high-k gate dielectric GeOI MOSFET (metal-oxide-semiconductor field-effect transistor) is established by considering the two-dimensional effects in both channel and buried-oxide layers and solving two-dimensional Poisson’s equation. The influences of the main structural parameters of the device on threshold voltage and subthreshold swing, and the short-channel effects, drain induction barrier lower effect and substrate-biased effect are investigated using the model, and the design principles and value range of the structural parameters are presented to optimize the electrical performances of the device. The simulated results are in good agreement with the TCAD simulated data, confirming the validity of the model.