Open AccessElectroluminescence from Si nanostructure-based silicon nitride light-emitting devices
Author(s) -
Lin Ze-Wen,
Xiang Wang,
Huang Rui,
Zhenxu Lin,
Chao Song,
Yanqing Guo,
Yi Zhang,
Xintang Huang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.037801
Subject(s) - electroluminescence , materials science , optoelectronics , light emitting diode , silicon nitride , substrate (aquarium) , silicon , layer (electronics) , luminescence , plasma enhanced chemical vapor deposition , common emitter , chemical vapor deposition , nanostructure , nanotechnology , oceanography , geology
Dense Si nanostructures embedded in silicon nitride prepared by plasma-enhanced chemical vapor deposition (PECVD) was used as luminescence active layer to fabricate light-emitting diodes based on p-Si/SiN-based emitter/AZO structure. Visible electroluminescence from the device was observed at room temperature. It is found that the electroluminescence intensity of the device can be further enhanced significantly by inserting an ultrathin nanocrystalline Si layer between the p-Si substrate and SiN-based emitter as a hole barrier layer. Moreover, the electroluminescence efficiency is increased by more than 80% as compared to the decice without the nc-Si barrier layer.