Open AccessCurved surface effect and characteristic emission of silicon nanostructures
Author(s) -
Weiqi Huang,
Huang Zhong-Mei,
Xiangshui Miao,
Jun Yin,
Zhou Nian-Jie,
Shirong Liu,
Chao-Jian Qin
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.034201
Subject(s) - nanostructure , silicon , materials science , curvature , wavelength , surface (topology) , spectral line , electron , emission spectrum , photoluminescence , surface states , optoelectronics , molecular physics , nanotechnology , physics , geometry , mathematics , quantum mechanics , astronomy
Some bonds on the curved surface (CS) of silicon nanostructures can produce localized electron states in the band gap. Calculated results show that different curvature can form the characteristic electron states for some special bonding on nanosilicon surface, which are related to a series peaks in photoluminescience (PL), such as LN, LO1 and LO2 lines in PL spectra due to SiN, Si=O and SiOSi bonds on the curved surface, respectively. In the same way, SiYb bond on the curved surface of Si nanostructures can manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as LYb line near 1550 nm in the electroluminescience (EL).