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Progress of flexible organic non-volatile memory field-effect transistors
Author(s) -
Yi Chai,
Yanjie Guo,
Wei Bian,
Li Wen,
Tao Yang,
Moonsuk Yi,
Quli Fan,
Linghai Xie,
Wei Huang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.027302
Subject(s) - flexibility (engineering) , transistor , electronics , computer science , electronic circuit , flexible electronics , field (mathematics) , materials science , field effect transistor , nanotechnology , electrical engineering , voltage , engineering , statistics , mathematics , pure mathematics
Flexible organic non-volatile memory field-effect transistors (ONVMFETs) are promising candidates in the field of flexible organic electronic devices, which can be used in flexible radio frequency tags, memories, integrated circuits and large-area displays, because of their remarkable advantages such as flexibility, lightweight, low cost and large-area organic electronics. On the basis of the introduction of the development of flexible ONVMFETs in terms of substrates, structures and characteristics, the classification of flexible ONVMFETs is summarized. Meanwhile, we discuss the effects of mechanical stress and temperature on the performance of flexible ONVMFET. Finally, some prospects as well as the challenges are pointed out.

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