Open AccessSynergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory
Author(s) -
Yuzhou Xiao,
Hao Guo,
Fengqi Zhang,
Zhao Wen,
Yanping Wang,
Lili Ding,
Fei Xue,
Yan-An Luo,
Keying Zhang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.018501
Subject(s) - static random access memory , single event upset , sensitivity (control systems) , radiation , ionizing radiation , random access memory , event (particle physics) , physics , materials science , irradiation , optoelectronics , computer science , optics , electronic engineering , nuclear physics , engineering , quantum mechanics , computer hardware
The single event effect sensitivity of static random access memory(SRAM) under different cumulative dose were carried out using 60Co source and heavy ions. The trend of sensitivity was obtained and the radiation damage mechanism was analyzed theoretically. This investigation shows that the variation in single event upset cross section with increasing accumulated dose appears to be consistent with the radiation-induced leakage current originating in the memory cells that affects the parameters such as low-level hold voltage and high-level fall time and induces con-imprint effect. Results obtained support the reliability analysis of the aerospace devices in space radiation environment.