Open AccessInfluence of channel length on PD SOI PMOS devices under total dose irradiation
Author(s) -
Hongxia Liu,
Zhi Wang,
Zhuo Qing-Qing,
Qianqiong Wang
Publication year - 2014
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.63.016102
Subject(s) - pmos logic , transconductance , silicon on insulator , irradiation , materials science , threshold voltage , optoelectronics , subthreshold conduction , channel (broadcasting) , voltage , electrical engineering , transistor , silicon , physics , nuclear physics , engineering
This paper mainly investigates the total dose irradiation effects on 0.8 μm PD SOI PMOS devices which are exposed to 60Co γ-rays at a dose rate of 50 rad(Si)/s. The channel length dependence of SOI PMOS devices at total dose irradiation is investigated. The result shows that the threshold voltage shift is only a little larger for shorter channel devices at the same total dose. However, the degradation of maximum transconductance for shorter channel devices is more significant. We found that the oxide-trapped charge is the main factor impacting the threshold drift. We may conclude that a short channel device can produce more interface trapped charges by using the subthreshold separation technology.