Open AccessEffect of a-Si：H interface buffer layer on the performance of hydrogenated amorphous silicon germanium thin film solar cell
Author(s) -
Bofei Liu,
Bai Li-Sha,
Dekun Zhang,
Changchun Wei,
Jian Sun,
Guofu Hou,
Ying Zhao,
Xiaodan Zhang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.248801
Subject(s) - materials science , solar cell , germanium , optoelectronics , layer (electronics) , silicon , amorphous silicon , band gap , crystalline silicon , nanotechnology
In the light of the open circuit voltage and fill factor reduction resulting from band gap discontinuities and high defect densities at interfaces when more germanium is mixed into the intrinsic layer of hydrogenated amorphous silicon germanium solar cell, the insertion of a-Si:H buffer layer with proper band gap into PI interface not only mitigates band gap discontinuities and interface recombination, but also improves the electric field distribution by reducing the defect densities at PI interface, thus the collection efficiency of a-SiGe:H solar cell is enhanced. By inserting a-Si:H buffer layer into IN interface and designing band gap profile along the a-SiGe:H intrinsic layer further, the 8.72% conversion efficiency of single junction a-SiGe:H solar cell is achieved when only Al back reflector is added as back contact.