Open AccessAnalytical modeling for drain current of strained Si NMOSFET
Author(s) -
Chunyu Zhou,
Heming Zhang,
Huiyong Hu,
Yiqi Zhang,
Lijun Yi,
Bin Wang,
Yuchen Li
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.237103
Subject(s) - subthreshold conduction , materials science , smoothing , velocity saturation , channel length modulation , saturation current , saturation (graph theory) , inversion (geology) , optoelectronics , mosfet , electronic engineering , computer science , transistor , electrical engineering , voltage , engineering , paleontology , mathematics , combinatorics , structural basin , computer vision , biology
Based on the structure of strained Si/SiGe NMOSFET, a unified drain current model is presented in this paper. The model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a smoothing function, and guarantees the continuities of the drain current and its derivatives.Furthermore, the model accuracy is enhanced by including carrier velocity saturation and channel length modulation effects. Comparisons between the model and the measured data show that the drain current model can describe the device characteristics well. The proposed model is useful for the design and simulation of digital and analogy circuits made of strained Si.