Uni-traveling-carrier double heterojunction phototransistor photodetector | Zendy

Huo Wen-Juan | Zendy; Hongyun Xie | Zendy; Liang Song | Zendy; Wanrong Zhang | Zendy; Zhiyun Jiang | Zendy; Xiang Chen | Zendy; Dong Lu | Zendy

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Uni-traveling-carrier double heterojunction phototransistor photodetector

Author(s) -

Huo Wen-Juan,

Hongyun Xie,

Liang Song,

Wanrong Zhang,

Zhiyun Jiang,

Xiang Chen,

Dong Lu

Publication year - 2013

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.62.228501

Subject(s) - photodiode , responsivity , photodetector , optoelectronics , heterojunction , materials science , detector , optics , photoresistor , physics

An InP/InGaAsP uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) photodetector is simulated and analyzed in a two-dimensional (2D) model utilizing a numerical device simulator (Atlas). The effects of device structure parameters on operational performance, such as responsivity and characteristic frequency, are studied in detail. Simulation results indicate that the UTC-DHPT can ease the contradiction between detection efficiency and working speed, which exists in traditional heterojun-ction phototransistor and achieve both high responsivity (≥17.93 A/W) and high characteristic frequency (≥121.68 GHz) simultaneously.

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