Open AccessThermodynamic study on two-step desorption of oxides on InAs(001) surface
Author(s) -
Wei Wen-Zhe,
Guo Xiang,
Ke Liu,
Yi Wang,
Zhijun Luo,
Zhou Qing,
Jihong Wang,
Ding Zhao
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.226801
Subject(s) - desorption , indium , materials science , reflection high energy electron diffraction , substrate (aquarium) , analytical chemistry (journal) , oxide , thermal desorption spectroscopy , ultra high vacuum , epitaxy , nanotechnology , optoelectronics , chemistry , adsorption , metallurgy , layer (electronics) , oceanography , chromatography , geology
Reflection high energy electron diffraction (RHEED) is used to monitor the two-step desorption of oxides on InAs(001) surface in the vacuum chamber, and the high temperature indium-assisted desorption processes of surface oxides under high arsenic pressure and low arsenic pressure are compared. The first step of two-step deoxidation method for InAs substrate is to heat the substrate slowly at high temperature. The second step is high temperature indium beam-assisted desorption of surface oxides. The RHEED patterns of sample at high temperature desorption of oxides show that the high temperature indium beam-assisted desorption of InAs surface oxide method could eventually clear residual oxide that the traditional slow heating method cannot remove. The scanning tunneling microscope images of sample after homogeneous epitaxial growth prove the viability of high-heat indium beam-assisted desorption of InAs surface oxide under high arsenic pressure. Finally, we analyse the mechanism of high-heat indium beam assisted desorption of surface oxides of substrate.