Open AccessStudy on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate
Author(s) -
Bin Wang,
Heming Zhang,
Huiyong Hu,
Yuming Zhang,
Jianjun Song,
Chunyu Zhou,
Yuchen Li
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.218502
Subject(s) - materials science , mosfet , strain engineering , optoelectronics , electron mobility , crystallite , threshold voltage , short channel effect , channel (broadcasting) , electronic engineering , engineering physics , voltage , silicon , electrical engineering , transistor , physics , engineering , metallurgy
A new strained Si MOSFET structure with hetero-polycrystalline SiGe gate was studied, which combines the advantages of “gate engineering” and “strain engineering”. The new structure improved the carrier transport efficiency, suppressed the short-channel effects (SCE), and enhanced the performance on the basis of strain. Then a physically modeling strategy such as quasi-2D surface potential of strong inversion, threshold voltage, and channel current was presented for the strained Si NMOSFET. Finally, the above model was computed and the results were analyzed.