Open AccessEquivalent circuit analysis model of charge-controlled memristor and its circuit characteristics
Author(s) -
Hu Feng-Wei,
Bao Bo-Cheng,
Huagan Wu,
Chunli Wang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.218401
Subject(s) - memristor , equivalent circuit , electrical element , charge control , memistor , spice , charge (physics) , hysteresis , nonlinear system , voltage , computer science , physics , electronic engineering , resistive random access memory , power (physics) , condensed matter physics , engineering , battery (electricity) , quantum mechanics
Memristor realized physically is recently a basic two-terminal circuit element with memory property. Based on Taylor series form of φ-q relationship, a charge-controlled memristor equivalent circuit analysis model is built. A charge-controlled memristor model with cubic nonlinearity is taken, as an example, to make a theoretical analysis of circuit characteristics, such as voltage-current relationship, active-passive property, and so on, of the charge-controlled memristor with different parameters. Results indicate that the voltage-current relationship of the charge-controlled memristor has an italic “8” shaped hysteresis loop characteristic, and the charge-controlled memristor shows passivity and activity accompanied with the variations of parameter symbols, resulting in the occurrence of the corresponding variations of circuit characteristics; compared with the passive memristor, the active memristor is more suitable for use as a second harmonic signal generation circuit. An experiment circuit is built based on the equivalent circuit of the charge-controlled memristor characteristic analysis, and the experimental results well verify the theoretical analysis.