Open AccessTheoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode
Author(s) -
Haoran Chen,
Yang Lin-An,
Zhu Zhangming,
Zhiyu Lin,
Jincheng Zhang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.217301
Subject(s) - quantum tunnelling , materials science , resonant tunneling diode , trapping , diode , degradation (telecommunications) , optoelectronics , gallium nitride , energy (signal processing) , quantum well , condensed matter physics , physics , nanotechnology , quantum mechanics , electronic engineering , ecology , laser , layer (electronics) , engineering , biology
In this paper we study theoretically the degradation phenomenon of GaN-based resonant tunneling diode (RTD). The effects of trapping centers on GaN-based RTD are calculated and studied by self-consistently solving the Poisson-Schrödinger aligns when three experimentally obtained deep-level trapping centers are introduced into the AlGaN/GaN/AlGaN quantum well. Results show that the degradations of negative differential resistance (NDR) characteristic in GaN-based RTDs are actually caused by the combined action of the activation energy and the defect density. The deep-level trapping center with high activation energy plays a dominating role in the degradation of NDR characteristics because the probability of ionization is exponentially proportional to the activation energy.