Relations between traversal time in ferromagnetic/semiconductor(insulator)/ferromagnetic heterojunction and the relative magnetic moment angle in two ferromagnetic layers
Author(s) -
L Hou-Xiang,
Shi De-Zheng,
Xie Zheng-Wei
Publication year - 2013
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.208502
Subject(s) - ferromagnetism , condensed matter physics , heterojunction , materials science , insulator (electricity) , ferromagnetic material properties , tree traversal , magnetic moment , magnetic semiconductor , physics , magnetic field , optoelectronics , magnetization , quantum mechanics , computer science , programming language
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom