Open AccessNumerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process node
Author(s) -
Bi Jinshun,
Gang Liu,
Jun Luo,
Han Zhengsheng
Publication year - 2013
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.208501
Subject(s) - transient (computer programming) , silicon on insulator , node (physics) , transistor , materials science , silicon , optoelectronics , process (computing) , thin film transistor , event (particle physics) , computer science , electrical engineering , voltage , physics , nanotechnology , layer (electronics) , quantum mechanics , engineering , operating system
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