Open AccessStudy on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates
Author(s) -
Yabin Sun,
Jun Fu,
Jun Xu,
Yudong Wang,
Wei Zhou,
Wei Zhang,
Jie Cui,
Gaoqing Li,
Zhihong Liu
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.196104
Subject(s) - materials science , bipolar junction transistor , optoelectronics , heterojunction , irradiation , germanium , ionizing radiation , impact ionization , heterojunction bipolar transistor , silicon , dose rate , radiation , transistor , ionization , radiochemistry , optics , voltage , chemistry , electrical engineering , physics , ion , organic chemistry , nuclear physics , engineering
Ionizing radiation effects in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) at different dose rates were investigated. Experimental results show that the base current increases with increasing accumulated dose for the high and low dose rates of irradiation, causing a significant drop in current gain. Besides, the lower the dose rate, the higher the radiation damage, which demonstrates a significantly enhanced low-date-rate sensitivity (ELDRS) effect in the SiGe HBTs. The different degradation behaviors for high and low dose rates of irradiation are compared with each other and discussed; furthermore, the underlying physical mechanisms are analyzed and investigated in detail.