Open AccessThe impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor
Author(s) -
Shouli Zhou,
Jia Li,
Ren Hong-Liang,
Hao Wen,
Peng Yinsheng
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.178501
Subject(s) - thermionic emission , heterojunction bipolar transistor , heterojunction , bipolar junction transistor , materials science , common emitter , optoelectronics , quantum tunnelling , heterostructure emitter bipolar transistor , diffusion , transistor , voltage , electrical engineering , electron , physics , engineering , quantum mechanics , thermodynamics
The carriers transport at the base-emitter interface of abrupt heterojunction bipolar transistors (HBTs) is controlled by thermionic emission and tunneling, which depends on the form and height of the energy barriers. The interface charges at the heterojunction disturb the energy barriers, thus bringing about the change of the electrical characteristics of HBT. Based on thermionic-field-diffusion model which combines the drift-diffusion transport in the bulk of the transistor with the thermionic emission and tunneling at the interface, a conclusion can be drawn that the positive interface charges can improve the electrical characteristics of abrupt InP/InGaAs HBT, while the negative interface charges deteriorate the devices.