Open AccessPhotoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing
Author(s) -
Pan Shu-Wan,
Songyan Chen,
Zhen Bi,
Wei Huang,
Li Cheng,
Hongkai Lai,
Jiaxian Wang,
Chen Song Yan,
Huang Wei,
李成,
Lai Hong Kai
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.177802
Subject(s) - photoluminescence , materials science , annealing (glass) , nanocrystal , amorphous solid , selenium , crystallography , optoelectronics , nanotechnology , chemistry , metallurgy
We have investigated the structure and photoluminescence (PL) properties of Se nanocrystals (NCs) obtained by rapid thermal annealing of a-Se films on Si substrate. The size of Se NCs in a trigonal phase increases linearly with increasing temperature. Moreover, three PL peaks located at 1.4, 1.7 and 1.83 eV are observed, which are attributed to the emission of defects in amorphous Se, donor-acceprter pair (DAP) recombination at the interface of amorphous Se and Se NCs, and interband transition of Se crystals, respectively.