Open AccessExperimental characterization of polarization gain properties of 808nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets
Author(s) -
Jianwei Wu,
Mingqi Yang,
Yin Ning,
Gao Shang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.174209
Subject(s) - laser , semiconductor optical gain , polarization (electrochemistry) , amplified spontaneous emission , materials science , semiconductor , optoelectronics , semiconductor laser theory , spontaneous emission , spectral line , gain , quantum well , optics , active laser medium , physics , laser power scaling , chemistry , astronomy
The information of optical gain of semiconductor lasers can be obtained through the amplified spontaneous emission from double facets. By utilizing this new approach, an experimental research about polarization (TE and TM) gain characteristics of continuously-operated 808 nm GaAs/AlGaAs quantum well laser is introduced in this paper. Through the measured gain spectra which are compared with the theoretical gain curves, we analyze the variations of hole subband corresponding to the polarizations along with the change of injection current, meanwhile the actual status of gain spectra and influential factors of the continuously-operated laser are discussed as well.