A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells | Zendy

Zhao Shou-Ren | Zendy; Zhipeng Huang | Zendy; Lei Sun | Zendy; Sun Peng-Chao | Zendy; Chuanjun Zhang | Zendy; Wu Yun-Hua | Zendy; Cao Hong | Zendy; Wang ShanLi | Zendy; Chu Junhao | Zendy

Open Access

A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells

Author(s) -

Zhao Shou-Ren,

Zhipeng Huang,

Lei Sun,

Sun Peng-Chao,

Chuanjun Zhang,

Wu Yun-Hua,

Cao Hong,

Wang ShanLi,

Chu Junhao

Publication year - 2013

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.62.168801

Subject(s) - saturation current , schottky barrier , cadmium telluride photovoltaics , materials science , current density , solar cell , saturation (graph theory) , voltage , condensed matter physics , dark current , optoelectronics , physics , diode , quantum mechanics , photodetector , mathematics , combinatorics

Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (φb) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (φb) and the reverse saturation current density (Jb0) is revised and the experimental data are consistent with the simulation results very well.

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