Open AccessA detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells
Author(s) -
赵守仁,
黄志鹏,
孙雷,
孙朋超,
张传军,
邬云华,
曹鸿,
王善力,
褚君浩
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.168801
Subject(s) - saturation current , schottky barrier , cadmium telluride photovoltaics , materials science , current density , solar cell , saturation (graph theory) , voltage , condensed matter physics , dark current , optoelectronics , physics , diode , quantum mechanics , photodetector , mathematics , combinatorics
Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (φb) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (φb) and the reverse saturation current density (Jb0) is revised and the experimental data are consistent with the simulation results very well.