Open AccessFlat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor
Author(s) -
Yue Zhang,
Zhuo Qing-Qing,
Hongxia Liu,
Xiaohua Ma,
Yue Hao
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.167305
Subject(s) - instability , negative bias temperature instability , materials science , mechanics , transistor , stress (linguistics) , field effect transistor , mosfet , semiconductor , condensed matter physics , phase (matter) , physics , voltage , optoelectronics , linguistics , philosophy , quantum mechanics
The effect of static negative bias temperature instability stress on p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability degradation presents the trend which follows the reaction-diffusion (R-D) theory on the exaggerated time scale. A flat-roof section is observed under the varying stress condition, which can be considered as the dynamic equilibrium phase through the simulation verification based on the R-D model. The analysis of the simulated results also provides the explanation for the difference in the time duration of the dynamic equilibrium phase under the condition of varying stress voltage.