Open AccessAccurate Rutherford backscattering spectrocsopy measurement of aluminium composition in AlxGa1-xN crystal film
Author(s) -
Liu Yun-Chuan,
Yanping Zhou,
Xuerong Wang,
XiangYan Meng,
Jian Duan,
Zheng Hui-Bao
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.162901
Subject(s) - materials science , sapphire , aluminium , epitaxy , analytical chemistry (journal) , photoluminescence , homogeneity (statistics) , transmittance , aluminium nitride , rutherford backscattering spectrometry , elastic recoil detection , ion beam , spectroscopy , metalorganic vapour phase epitaxy , thin film , optics , optoelectronics , layer (electronics) , laser , beam (structure) , chemistry , physics , nanotechnology , statistics , mathematics , chromatography , quantum mechanics , metallurgy
The AlxGa1-xN epitaxial film is grown on (0001)-oriented sapphire with a 20 nm thick aluminium nitride buffer layer by metal organic chemical vapor deposition. The thickness of AlxGa1-xN layer with high crystal quality is about 2 μrm determined by ultraviolet visible light transmittance spectrum analysis. The homogeneity of aluminium in AlxGa1-xN epitaxial film is tested through the energy Eg at the peak intensity in the deep ultraviolet photoluminescence spectrum. The epitaxial wafer with good homogeneity is used to determine aluminium composition by Rutherford backscattering spectroscopy (RBS). Six samples are measured by tow ion beam analysis laboratories, and the experimental data of RBS random spectrum are simulated by the software. The source of measurement uncertainty is analyzed including the sample homogeneity, pileup correction and counting statistics and so on. The research results show that when the alpha particle is used as incident ion, with 2000 keV energy and 165° scattering angle, the measurement uncertainty of RBS for the determination of aluminium composition (x=0.8) is 2.0% and the coverage factor k=2.