Investigation of inverted metamorphic GaInP/GaAs/In0.3Ga0.7As (1 eV) triple junction solar cells for space applications | Zendy

Yong Zhang | Zendy; Shan Zhi-Fa | Zendy; Cai Jian-Jiu | Zendy; Wu Hong-Qing | Zendy; Juncheng Li | Zendy; Chen Kai-xuan | Zendy; Zhiwei Lin | Zendy; Xiangwu Wang | Zendy

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Investigation of inverted metamorphic GaInP/GaAs/In0.3Ga0.7As (1 eV) triple junction solar cells for space applications

Author(s) -

Yong Zhang,

Shan Zhi-Fa,

Cai Jian-Jiu,

Wu Hong-Qing,

Juncheng Li,

Chen Kai-xuan,

Zhiwei Lin,

Xiangwu Wang

Publication year - 2013

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.62.158802

Subject(s) - triple junction , materials science , solar cell , optoelectronics , gallium arsenide , transmission electron microscopy , quantum efficiency , substrate (aquarium) , nanotechnology , biology , ecology

High efficiency inverted metamorphic (IMM) GaInP/GaAs/In0.3Ga0.7As(1.0 eV) triple-junction solar cells have been fabricated by growing In0.3Ga0.7As(1.0 eV) sub-cell using step-graded buffer layer, which is 2% lattice mismatch to the GaAs middle cell. The high crystalline quality and low threading dislocation density are confirmed by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The quantum efficiency and I-V characteristic are measured for the IMM GaInP/GaAs/In0.3Ga0.7As solar cells, as well as for the conventional triple-junction solar cell based on Ge substrate (GaInP/GaAs/Ge). The efficiency of the designed cell with an area of 10.922 cm2 is 32.64% (AM0, 25 ℃), which is 3% higher than the conventional GaInP/GaAs/Ge triple junction solar cell.

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